 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.00.3 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5max. 1.1max. 10.5min. 2.0 0.80.1 0.5max. 2.540.3 5.080.5 1 2 3 s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -60 -80 -60 -80 -5 -8 -4 40 1.3 150 -55 to +150 Unit V 2SB930 2SB930A 2SB930 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 6.00.3 emitter voltage 2SB930A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 14.70.5 4.40.5 0 to 0.4 V A A W 10.00.3 1.5-0.4 4.40.5 2.0 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 5.080.5 C C 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB930 2SB930A 2SB930 2SB930A 2SB930 2SB930A (TC=25C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = -4A, IB1 = - 0.4A, IB2 = 0.4A Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VCE = -30V, IB = 0 VCE = -60V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -3A VCE = -4V, IC = -3A IC = -4A, IB = - 0.4A VCE = -10V, IC = - 0.1A, f = 1MHz 20 0.2 0.5 0.2 -60 -80 70 15 min typ 1:Base 2:Collector 3:Emitter N Type Package (DS) max -400 -400 -700 -700 -1 3.0-0.2 +0.4 +0 Unit A A mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 250 -2 -1.5 V V MHz s s s Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC -- Ta 50 -6 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) IB=-120mA -5 TC=25C 2SB930, 2SB930A IC -- VCE -10 VCE=-4V IC -- VBE Collector power dissipation PC (W) 45 40 35 30 25 20 15 10 5 0 0 20 40 (2) (3) (1) -100mA -80mA Collector current IC (A) -4 Collector current IC (A) -8 -60mA -6 25C TC=100C -25C -3 -40mA -20mA -10mA -4 -2 -1 -8mA -5mA -2 0 60 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=10 -30 -10 -3 -1 25C TC=100C -25C 10000 hFE -- IC 10000 VCE=-4V 3000 1000 300 100 30 10 3 fT -- IC VCE=-5V f=1MHz TC=25C Forward current transfer ratio hFE 1000 25C 300 100 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 TC=100C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Transition frequency fT (MHz) -1 -3 -10 3000 -1 -3 -10 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) -100 -30 103 Non repetitive pulse TC=25C ICP IC 10ms -1 300ms t=1ms Rth(t) -- t (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 -10 -3 - 0.3 - 0.1 - 0.03 - 0.01 -1 1 10-1 -3 -10 -30 -100 -300 -1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
Price & Availability of 2SB930
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |